RD3H080SPFRATL
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
RD3H080SPFRA IS A POWER MOSFET W
PDF
/
Buying Options
Total Price: USD $1.7
Unit Price: USD $1.699287
≥1 USD $1.699287
≥10 USD $1.564547
≥100 USD $1.479518
Inventory: 42
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 15W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 91m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 10V
Current - Continuous Drain (Id) @ 25°C 8A Ta
Gate Charge (Qg) (Max) @ Vgs 9nC @ 5V
Drain to Source Voltage (Vdss) 45V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 8A
Drain-source On Resistance-Max 0.147Ohm
Pulsed Drain Current-Max (IDM) 16A
DS Breakdown Voltage-Min 45V
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
Recommended For You
RD3H080SPFRATL+price,RD3H080SPFRATL+datasheet,RD3H080SPFRATL+in stock,buy+RD3H080SPFRATL,finder+RD3H080SPFRATL,RD3H080SPFRATL+tutorials,RD3H080SPFRATL+download