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RoHS
RoHS RoHS compliant
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 250V 22A TO220
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Buying Options
Total Price: USD $1.83
Unit Price: USD $1.831102
≥1 USD $1.831102
≥10 USD $1.727456
≥100 USD $1.629665
≥500 USD $1.537418
≥1000 USD $1.450401
Inventory: 7939
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 13 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Bulk
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.23W Ta 40W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 140m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 22A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 22A
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.14Ohm
Pulsed Drain Current-Max (IDM) 88A
DS Breakdown Voltage-Min 250V
Avalanche Energy Rating (Eas) 36.8 mJ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

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