Input Capacitance (Ciss) (Max) @ Vds 6900pF @ 25V
Vgs(th) (Max) @ Id 5V @ 1mA
Rds On (Max) @ Id, Vgs 42.7m Ω @ 35A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1.56W Ta 40W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
Avalanche Energy Rating (Eas) 396 mJ
Drain to Source Breakdown Voltage 200V
Drain-source On Resistance-Max 0.0427Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 70A
Turn-Off Delay Time 160 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 125nC @ 10V
Current - Continuous Drain (Id) @ 25°C 70A Tc