RCJ160N20TL
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 16A LPTS
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Buying Options
Total Price: USD $1.5
Unit Price: USD $1.5048
≥1 USD $1.5048
≥10 USD $1.25224
≥100 USD $0.9966
≥500 USD $0.843251
Inventory: 981
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.56W Ta 40W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 5.25V @ 1mA
Avalanche Energy Rating (Eas) 20.7 mJ
DS Breakdown Voltage-Min 200V
Pulsed Drain Current-Max (IDM) 64A
Drain-source On Resistance-Max 0.18Ohm
Continuous Drain Current (ID) 16A
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 200V
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Input Capacitance (Ciss) (Max) @ Vds 1370pF @ 25V
Supply Chain
Factory Lead Time 20 Weeks
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Alternative Model
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