DS Breakdown Voltage-Min 200V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 7.5A
Turn-Off Delay Time 24 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 200V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Current - Continuous Drain (Id) @ 25°C 7.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 755pF @ 25V
Vgs(th) (Max) @ Id 5.25V @ 1mA
Rds On (Max) @ Id, Vgs 325m Ω @ 3.75A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 850mW Ta 20W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ