DS Breakdown Voltage-Min 12V
Pulsed Drain Current-Max (IDM) 18A
Drain-source On Resistance-Max 0.03Ohm
Continuous Drain Current (ID) 4.5A
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Drain to Source Voltage (Vdss) 12V
Gate Charge (Qg) (Max) @ Vgs 40nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 4.5A Ta
Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 6V
Vgs(th) (Max) @ Id 1V @ 1mA
Rds On (Max) @ Id, Vgs 30m Ω @ 4.5A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 600mW Ta
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ