R6520KNJTL
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
NCH 650V 20A POWER MOSFET. R652
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Buying Options
Total Price: USD $5.32
Unit Price: USD $5.324
≥1 USD $5.324
≥10 USD $4.46776
≥100 USD $3.614072
≥500 USD $3.212475
Inventory: 192
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 231W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 205m Ω @ 9.5A, 10V
Vgs(th) (Max) @ Id 5V @ 630μA
Input Capacitance (Ciss) (Max) @ Vds 1550pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 20A
Drain-source On Resistance-Max 0.205Ohm
Pulsed Drain Current-Max (IDM) 60A
DS Breakdown Voltage-Min 650V
Avalanche Energy Rating (Eas) 444 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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