R6511ENJTL
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
NCH 650V 11A POWER MOSFET. R651
PDF
/
Buying Options
Total Price: USD $3.43
Unit Price: USD $3.432
≥1 USD $3.432
≥10 USD $2.88288
≥100 USD $2.332528
≥500 USD $2.073386
Inventory: 144
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 124W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 400m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id 4V @ 320μA
Input Capacitance (Ciss) (Max) @ Vds 670pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 11A
Drain-source On Resistance-Max 0.4Ohm
Pulsed Drain Current-Max (IDM) 33A
DS Breakdown Voltage-Min 650V
Avalanche Energy Rating (Eas) 223 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
Recommended For You
R6511ENJTL+price,R6511ENJTL+datasheet,R6511ENJTL+in stock,buy+R6511ENJTL,finder+R6511ENJTL,R6511ENJTL+tutorials,R6511ENJTL+download