R6035ENZC8
RoHS 
RoHS compliant
RoHS compliantPackage TO-3P-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 35A TO3PF
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Buying Options
Total Price: USD $21.33
Unit Price: USD $21.32978
≥1 USD $21.32978
≥10 USD $20.122431
≥100 USD $18.983427
≥500 USD $17.908892
≥1000 USD $16.89518
Inventory: 1090
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Technical
Avalanche Energy Rating (Eas) 796 mJ
DS Breakdown Voltage-Min 600V
Pulsed Drain Current-Max (IDM) 105A
Drain-source On Resistance-Max 0.102Ohm
Threshold Voltage 4V
Continuous Drain Current (ID) 35A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Input Capacitance (Ciss) (Max) @ Vds 2720pF @ 25V
Vgs(th) (Max) @ Id 4V @ 1mA
Rds On (Max) @ Id, Vgs 102m Ω @ 18.1A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection ISOLATED
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 120W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Published 2014
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-3P-3 Full Pack
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 10 Weeks
Alternative Model
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