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R6030ENZC8

ROHM Semiconductor
RoHS
RoHS RoHS compliant
Package TO-3P-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 30A TO3PF
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Buying Options
Total Price: USD $6.19
Unit Price: USD $6.186253
≥1 USD $6.186253
≥10 USD $5.836088
≥100 USD $5.505743
≥500 USD $5.194089
≥1000 USD $4.90009
Inventory: 946
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 10 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Tube
Published 2014
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 120W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 130m Ω @ 14.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 30A
Threshold Voltage 4V
Pulsed Drain Current-Max (IDM) 80A
DS Breakdown Voltage-Min 600V

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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