R6030ENX
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 30A TO220
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Buying Options
Total Price: USD $5.55
Unit Price: USD $5.550214
≥1 USD $5.550214
≥10 USD $5.236045
≥100 USD $4.939662
≥500 USD $4.660068
≥1000 USD $4.396289
Inventory: 1108
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Dimensions
Width 4.8mm
Length 10.3mm
Height 15.4mm
Technical
Pulsed Drain Current-Max (IDM) 80A
Drain to Source Breakdown Voltage 600V
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AB
Threshold Voltage 4V
Continuous Drain Current (ID) 30A
Turn-Off Delay Time 190 ns
Fall Time (Typ) 60 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 55ns
Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Input Capacitance (Ciss) (Max) @ Vds 2100pF @ 25V
Vgs(th) (Max) @ Id 4V @ 1mA
Rds On (Max) @ Id, Vgs 130m Ω @ 14.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 40 ns
Case Connection ISOLATED
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 40W Tc
Number of Channels 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2014
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Weight 2.565008g
Number of Pins 3
Package / Case TO-220-3 Full Pack
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 18 Weeks
Alternative Model
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