R6020FNX
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 20A TO-220FM
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Buying Options
Total Price: USD $47.1
Unit Price: USD $47.10385
≥1 USD $47.10385
≥10 USD $38.6498
≥100 USD $37.4414
≥500 USD $36.23395
≥1000 USD $35.0265
Inventory: 1108
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Bulk
Published 2013
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 50W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Turn On Delay Time 50 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 250m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2040pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Rise Time 70ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 170 ns
Continuous Drain Current (ID) 20A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.25Ohm
Pulsed Drain Current-Max (IDM) 80A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 26.7 mJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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