R6020ENJTL
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 20A LPT
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Buying Options
Total Price: USD $2.36
Unit Price: USD $2.3584
≥1 USD $2.3584
≥10 USD $1.98176
≥100 USD $1.603008
≥500 USD $1.424931
Inventory: 1224
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 20 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 83
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 40W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 196m Ω @ 9.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 20A
Threshold Voltage 4V
Drain-source On Resistance-Max 0.196Ohm
Pulsed Drain Current-Max (IDM) 60A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 418 mJ
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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