R6009ENX
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 9A TO220
PDF
/
Buying Options
Total Price: USD $3.01
Unit Price: USD $3.0096
≥1 USD $3.0096
≥10 USD $2.5256
≥100 USD $2.043008
≥500 USD $1.816003
≥1000 USD $1.554942
≥3000 USD $1.464153
Inventory: 270
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Bulk
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 40W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 535m Ω @ 2.8A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 430pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 9A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 9A
Pulsed Drain Current-Max (IDM) 18A
DS Breakdown Voltage-Min 600V
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
Recommended For You
R6009ENX+price,R6009ENX+datasheet,R6009ENX+in stock,buy+R6009ENX,finder+R6009ENX,R6009ENX+tutorials,R6009ENX+download