R6009END3TL1
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
NCH 600V 9A POWER MOSFET. POWER
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Buying Options
Total Price: USD $2.12
Unit Price: USD $2.1208
≥1 USD $2.1208
≥10 USD $1.76176
≥100 USD $1.402104
≥500 USD $1.186416
≥1000 USD $1.006658
Inventory: 1148
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 153 mJ
DS Breakdown Voltage-Min 600V
Pulsed Drain Current-Max (IDM) 18A
Drain-source On Resistance-Max 0.535Ohm
Drain Current-Max (Abs) (ID) 9A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Input Capacitance (Ciss) (Max) @ Vds 430pF @ 25V
Vgs(th) (Max) @ Id 4V @ 1mA
Rds On (Max) @ Id, Vgs 535m Ω @ 2.8A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 94W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSSO-G2
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Supply Chain
Factory Lead Time 8 Weeks
Alternative Model
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