R6008ANX
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 8A TO-220FM
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Total Price: USD $1.57
Unit Price: USD $1.567139
≥1 USD $1.567139
Inventory: 1128
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 4.3 mJ
Pulsed Drain Current-Max (IDM) 32A
Drain to Source Breakdown Voltage 600V
Drain-source On Resistance-Max 0.8Ohm
Drain Current-Max (Abs) (ID) 8A
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 8A
Turn-Off Delay Time 60 ns
Fall Time (Typ) 35 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 25ns
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Input Capacitance (Ciss) (Max) @ Vds 680pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Rds On (Max) @ Id, Vgs 800m Ω @ 4A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 25 ns
Case Connection ISOLATED
Power Dissipation 50W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 50W Tc
Number of Elements 1
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Powers
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Pbfree Code yes
Published 2012
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-220-3 Full Pack
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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