DS Breakdown Voltage-Min 525V
Pulsed Drain Current-Max (IDM) 20A
Drain Current-Max (Abs) (ID) 5A
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 5A
Turn-Off Delay Time 40 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 525V
Gate Charge (Qg) (Max) @ Vgs 10.8nC @ 10V
Current - Continuous Drain (Id) @ 25°C 5A Ta
Input Capacitance (Ciss) (Max) @ Vds 320pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Rds On (Max) @ Id, Vgs 1.6 Ω @ 2.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 40W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin/Copper (Sn98Cu2)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ