R5019ANJTL
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 19A LPTS
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Buying Options
Total Price: USD $3.01
Unit Price: USD $3.011263
≥1 USD $3.011263
≥10 USD $2.835422
Inventory: 1006
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 83
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 100W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 100W
Turn On Delay Time 40 ns
FET Type N-Channel
Transistor Application SWITCHING
Current - Continuous Drain (Id) @ 25°C 19A Ta
Rise Time 115ns
Fall Time (Typ) 100 ns
Turn-Off Delay Time 165 ns
Continuous Drain Current (ID) 19A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.24Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 76A
Avalanche Energy Rating (Eas) 24.3 mJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Alternative Model
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