FET Feature Schottky Diode (Isolated)
Drain to Source Breakdown Voltage -30V
Drain-source On Resistance-Max 0.4Ohm
Drain Current-Max (Abs) (ID) 1A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 1A
Turn-Off Delay Time 18 ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 5V
Current - Continuous Drain (Id) @ 25°C 1A Ta
Input Capacitance (Ciss) (Max) @ Vds 90pF @ 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Rds On (Max) @ Id, Vgs 400m Ω @ 1A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.25W Ta
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ