BSM300C12P3E301
RoHS 
RoHS compliant
RoHS compliantPackage Module
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
SILICON CARBIDE POWER MODULE. B
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Buying Options
Total Price: USD $1977.22
Unit Price: USD $1977.216897
≥1 USD $1977.216897
≥200 USD $788.922923
≥500 USD $762.559891
≥1000 USD $749.533297
Inventory: 1242
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 19 Weeks
Physical
Package / Case Module
Technical
Operating Temperature -40°C~150°C TJ
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology SiC (Silicon Carbide Junction Transistor)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 1360W Tc
FET Type N-Channel
Vgs(th) (Max) @ Id 5.6V @ 80mA
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 10V
Current - Continuous Drain (Id) @ 25°C 300A Tc
Drain to Source Voltage (Vdss) 1200V
Vgs (Max) +22V, -4V
FET Feature Standard
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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