Drain to Source Breakdown Voltage 30V
Drain Current-Max (Abs) (ID) 0.1A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 100mA
Turn-Off Delay Time 80 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4V
Current - Continuous Drain (Id) @ 25°C 100mA Ta
Input Capacitance (Ciss) (Max) @ Vds 13pF @ 5V
Vgs(th) (Max) @ Id 1.5V @ 100μA
Rds On (Max) @ Id, Vgs 8 Ω @ 10mA, 4V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 200mW Ta
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Powers
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ