2SK2715TL
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 2A DPAK
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Buying Options
Total Price: USD $12.63
Unit Price: USD $12.63025
≥1 USD $12.63025
≥10 USD $10.3626
≥100 USD $10.0396
≥500 USD $9.71565
≥1000 USD $9.3917
Inventory: 1103
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 1998
JESD-609 Code e2
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish TIN COPPER
Subcategory FET General Purpose Power
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 2A
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 20W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 20W
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2A Ta
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 63 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 2A
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 2A
Drain-source On Resistance-Max 4Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 6A
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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