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RoHS
RoHS RoHS compliant
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Bulk Through Hole N-Channel MOSFET (Metal Oxide) Mosfet Transistor 150mA Ta 400mW Ta 60V -55C~150C TJ
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3

Technical

Operating Temperature -55°C~150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 400mW Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
Current - Continuous Drain (Id) @ 25°C 150mA Ta
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V

Compliance

RoHS Status ROHS3 Compliant

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