SPP80N03S2L-06
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
N-CHANNEL POWER MOSFET
PDF
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Buying Options
Total Price: USD $4.49
Unit Price: USD $4.49255
≥1 USD $4.49255
≥10 USD $3.686
≥100 USD $3.57105
≥500 USD $3.4561
≥1000 USD $3.34115
Inventory: 20004
Minimum: 1
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Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series OptiMOS?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Reach Compliance Code unknown
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 150W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.2m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 80μA
Input Capacitance (Ciss) (Max) @ Vds 2.53pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 80A
Drain-source On Resistance-Max 0.0095Ohm
Pulsed Drain Current-Max (IDM) 320A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 240 mJ
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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