Avalanche Energy Rating (Eas) 130 mJ
DS Breakdown Voltage-Min 600V
Pulsed Drain Current-Max (IDM) 9A
Drain-source On Resistance-Max 0.95Ohm
Drain Current-Max (Abs) (ID) 4.5A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Gate Charge (Qg) (Max) @ Vgs 22.9nC @ 10V
Current - Continuous Drain (Id) @ 25°C 4.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 580pF @ 25V
Vgs(th) (Max) @ Id 5.5V @ 200μA
Rds On (Max) @ Id, Vgs 950m Ω @ 2.8A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 50W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status COMMERCIAL
Time@Peak Reflow Temperature-Max (s) 40
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED, HIGH VOLTAGE
Terminal Finish MATTE TIN
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ