SFF9250L
RoHS 
RoHS compliant
RoHS compliantPackage TO-3P-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
P-CHANNEL POWER MOSFET
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 990 mJ
DS Breakdown Voltage-Min 200V
Pulsed Drain Current-Max (IDM) 50.4A
Drain-source On Resistance-Max 0.23Ohm
Drain Current-Max (Abs) (ID) 12.6A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 5V
Drain to Source Voltage (Vdss) 200V
Gate Charge (Qg) (Max) @ Vgs 120nC @ 5V
Current - Continuous Drain (Id) @ 25°C 12.6A Tc
Input Capacitance (Ciss) (Max) @ Vds 3.25pF @ 25V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 230m Ω @ 6.3A, 5V
Transistor Application SWITCHING
FET Type P-Channel
Case Connection ISOLATED
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 90W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status COMMERCIAL
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Finish NOT SPECIFIED
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-3P-3 Full Pack
Mounting Type Through Hole
Alternative Model
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