RFD3055
RoHS
/
Package /
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
N-CHANNEL SINGLE WITH BUILT-IN DIODE TO-251AA SILICON Mosfet Transistor 12A 60V 0.15Ohm
PDF
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Buying Options
Total Price: USD $0.17
Unit Price: USD $0.1672
≥1 USD $0.1672
Inventory: 1168
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
FET Technology METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min 60V
Drain-source On Resistance-Max 0.15Ohm
Drain Current-Max (Abs) (ID) 12A
JEDEC-95 Code TO-251AA
Polarity/Channel Type N-CHANNEL
Transistor Application SWITCHING
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status COMMERCIAL
JESD-30 Code R-PSIP-T3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Terminal Finish TIN LEAD
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Physical
Transistor Element Material SILICON
Surface Mount NO
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