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RoHS
RoHS RoHS compliant
Package 8-PowerWDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description SMALL SIGNAL N-CHANNEL MOSFET
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Buying Options
Total Price: USD $6.02
Unit Price: USD $6.02015
≥1 USD $6.02015
≥10 USD $4.93905
≥100 USD $4.78515
≥500 USD $4.6303
≥1000 USD $4.4764
Inventory: 1461
Minimum: 1
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code S-XDSO-N5
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 890mW Ta 20W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1.194pF @ 15V
Current - Continuous Drain (Id) @ 25°C 7.1A Ta 34A Tc
Gate Charge (Qg) (Max) @ Vgs 17.3nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 7.1A
Drain-source On Resistance-Max 0.013Ohm
DS Breakdown Voltage-Min 30V

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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