Feedback Cap-Max (Crss) 135 pF
FET Feature Schottky Diode (Isolated)
DS Breakdown Voltage-Min 20V
Drain-source On Resistance-Max 0.085Ohm
Drain Current-Max (Abs) (ID) 2.34A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Current - Continuous Drain (Id) @ 25°C 2.34A Ta
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 16V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 85m Ω @ 3.05A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 730mW Ta
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status COMMERCIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Terminal Finish MATTE TIN
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Packaging Tape & Reel (TR)