NTMSD3P102R2
RoHS
/
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
SMALL SIGNAL P-CHANNEL MOSFET
PDF
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Buying Options
Total Price: USD $24.03
Unit Price: USD $24.0255
≥1 USD $24.0255
≥10 USD $19.71345
≥100 USD $19.0969
≥500 USD $18.4813
≥1000 USD $17.8657
Inventory: 4404
Minimum: 1
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series FETKY?
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Terminal Finish TIN LEAD
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
JESD-30 Code R-PDSO-G8
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 730mW Ta
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 85m Ω @ 3.05A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 16V
Current - Continuous Drain (Id) @ 25°C 2.34A Ta
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 2.34A
Drain-source On Resistance-Max 0.085Ohm
DS Breakdown Voltage-Min 20V
FET Feature Schottky Diode (Isolated)
Feedback Cap-Max (Crss) 135 pF
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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