NTMS7N03R2
RoHS
/
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
N-CHANNEL POWER MOSFET
PDF
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Buying Options
Total Price: USD $0.44
Unit Price: USD $0.4427
≥1 USD $0.4427
≥10 USD $0.36385
≥100 USD $0.35245
≥500 USD $0.34105
≥1000 USD $0.32965
Inventory: 2618
Minimum: 1
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Technical Details
Technical
Number of Terminations 8
Terminal Finish TIN LEAD
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
JESD-30 Code R-PDSO-G8
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 800mW Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 23m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1.19pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.8A Ta
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 4.8A
Drain-source On Resistance-Max 0.023Ohm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Avalanche Energy Rating (Eas) 288 mJ
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 14A
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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