NTLGF3402PT1G
RoHS 
RoHS compliant
RoHS compliantPackage 6-VDFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
P-CHANNEL POWER MOSFET
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Inventory: 1996
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
DS Breakdown Voltage-Min 20V
Pulsed Drain Current-Max (IDM) 11A
Drain-source On Resistance-Max 0.14Ohm
Drain Current-Max (Abs) (ID) 2.3A
Vgs (Max) ±12V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 2.3A Ta
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 140m Ω @ 2.7A, 4.5V
Transistor Application SWITCHING
FET Type P-Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1.14W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status COMMERCIAL
JESD-30 Code R-XDSO-C8
Pin Count 6
Time@Peak Reflow Temperature-Max (s) 40
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) 260
Terminal Form C BEND
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Terminal Finish MATTE TIN
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series FETKY?
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case 6-VDFN Exposed Pad
Mounting Type Surface Mount
Alternative Model
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