NTD95N02RT4
RoHS
/
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
N-CHANNEL POWER MOSFET
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 84 mJ
DS Breakdown Voltage-Min 24V
Drain-source On Resistance-Max 0.005Ohm
Drain Current-Max (Abs) (ID) 32A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 24V
Gate Charge (Qg) (Max) @ Vgs 21nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 12A Ta 32A Tc
Input Capacitance (Ciss) (Max) @ Vds 2.4pF @ 20V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 5m Ω @ 20A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1.25W Ta 86W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status COMMERCIAL
JESD-30 Code R-PSSO-G2
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 240
Terminal Form GULL WING
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Terminal Finish TIN LEAD
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Alternative Model
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