NTD85N02RT4
RoHS
/
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
N-CHANNEL POWER MOSFET
PDF
/
Buying Options
Total Price: USD $12.38
Unit Price: USD $12.38325
≥1 USD $12.38325
≥10 USD $10.16025
≥100 USD $9.84295
≥500 USD $9.52565
≥1000 USD $9.20835
Inventory: 7204
Minimum: 1
-
+
Technical Details
Physical
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish TIN LEAD
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.25W Ta 78.1W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.2m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2.05pF @ 20V
Current - Continuous Drain (Id) @ 25°C 12A Ta 85A Tc
Gate Charge (Qg) (Max) @ Vgs 17.7nC @ 5V
Drain to Source Voltage (Vdss) 24V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 85A
Drain-source On Resistance-Max 0.0052Ohm
Pulsed Drain Current-Max (IDM) 192A
DS Breakdown Voltage-Min 24V
Avalanche Energy Rating (Eas) 85 mJ
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
Recommended For You
NTD85N02RT4+price,NTD85N02RT4+datasheet,NTD85N02RT4+in stock,buy+NTD85N02RT4,finder+NTD85N02RT4,NTD85N02RT4+tutorials,NTD85N02RT4+download