NTD4302-1G
RoHS 
RoHS compliant
RoHS compliantPackage TO-251-3 Short Leads, IPak, TO-251AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
N-CHANNEL POWER MOSFET
PDF
/
Buying Options
Total Price: USD $0.09
Unit Price: USD $0.09405
≥1 USD $0.09405
≥10 USD $0.07695
≥100 USD $0.07505
≥500 USD $0.0722
≥1000 USD $0.0703
Inventory: 20003
Minimum: 1
-
+
Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.04W Ta 75W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2.4pF @ 24V
Current - Continuous Drain (Id) @ 25°C 8.4A Ta 68A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 8.4A
Drain-source On Resistance-Max 0.01Ohm
Pulsed Drain Current-Max (IDM) 28A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 722 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
Recommended For You
NTD4302-1G+price,NTD4302-1G+datasheet,NTD4302-1G+in stock,buy+NTD4302-1G,finder+NTD4302-1G,NTD4302-1G+tutorials,NTD4302-1G+download