Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) 240
Time@Peak Reflow Temperature-Max (s) 30
Qualification Status COMMERCIAL
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 8.4A
Drain-source On Resistance-Max 0.01Ohm
Pulsed Drain Current-Max (IDM) 28A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 722 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR