FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 30 mJ
DS Breakdown Voltage-Min 60V
Pulsed Drain Current-Max (IDM) 27A
Drain-source On Resistance-Max 0.17Ohm
Drain Current-Max (Abs) (ID) 9A
Polarity/Channel Type N-CHANNEL
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status COMMERCIAL
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 240
Moisture Sensitivity Level (MSL) 1 (Unlimited)