NTD3055L170
RoHS
/
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
N-CHANNEL POWER MOSFET
PDF
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Buying Options
Total Price: USD $3.17
Unit Price: USD $3.16825
≥1 USD $3.16825
≥10 USD $2.5992
≥100 USD $2.51845
≥500 USD $2.43675
≥1000 USD $2.356
Inventory: 14705
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 30 mJ
DS Breakdown Voltage-Min 60V
Pulsed Drain Current-Max (IDM) 27A
Drain-source On Resistance-Max 0.17Ohm
Drain Current-Max (Abs) (ID) 9A
Vgs (Max) ±15V
Drive Voltage (Max Rds On,Min Rds On) 5V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 10nC @ 5V
Current - Continuous Drain (Id) @ 25°C 9A Ta
Input Capacitance (Ciss) (Max) @ Vds 275pF @ 25V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 170m Ω @ 4.5A, 5V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1.5W Ta 28.5W Tj
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status COMMERCIAL
JESD-30 Code R-PSSO-G2
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) 235
Terminal Form GULL WING
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Terminal Finish TIN LEAD
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Alternative Model
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