DS Breakdown Voltage-Min 25V
Pulsed Drain Current-Max (IDM) 40A
Drain-source On Resistance-Max 0.06Ohm
Drain Current-Max (Abs) (ID) 3.8A
Drive Voltage (Max Rds On,Min Rds On) 4V 5V
Drain to Source Voltage (Vdss) 25V
Gate Charge (Qg) (Max) @ Vgs 3.76nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 3.8A Ta 17.1A Tc
Input Capacitance (Ciss) (Max) @ Vds 225pF @ 20V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 45m Ω @ 6A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1.14W Ta 22.3W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status COMMERCIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Terminal Finish MATTE TIN
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ