NTB52N10
RoHS
/
Package /
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
N-CHANNEL POWER MOSFET
PDF
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Buying Options
Total Price: USD $1.39
Unit Price: USD $1.39175
≥1 USD $1.39175
≥10 USD $1.1419
≥100 USD $1.1058
≥500 USD $1.07065
≥1000 USD $1.03455
Inventory: 7353
Minimum: 1
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Technical Details
Physical
Surface Mount YES
Transistor Element Material SILICON
Technical
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish TIN LEAD
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 235
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 52A
Drain-source On Resistance-Max 0.03Ohm
Pulsed Drain Current-Max (IDM) 156A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 800 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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