DS Breakdown Voltage-Min 20V
Drain-source On Resistance-Max 0.23Ohm
Drain Current-Max (Abs) (ID) 0.915A
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 1.82nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 915mA Ta
Input Capacitance (Ciss) (Max) @ Vds 110pF @ 16V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Rds On (Max) @ Id, Vgs 230m Ω @ 600mA, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 300mW Tj
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Qualification Status COMMERCIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) 235
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ