DS Breakdown Voltage-Min 20V
Drain-source On Resistance-Max 0.36Ohm
Drain Current-Max (Abs) (ID) 0.76A
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 2.1nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 760mA Tj
Input Capacitance (Ciss) (Max) @ Vds 156pF @ 5V
Vgs(th) (Max) @ Id 450mV @ 250μA
Rds On (Max) @ Id, Vgs 360m Ω @ 350mA, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 301mW Tj
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status COMMERCIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) 235
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ