NDP603AL
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
N-CHANNEL POWER MOSFET
PDF
/
Buying Options
Total Price: USD $0.28
Unit Price: USD $0.2816
≥1 USD $0.2816
Inventory: 18782
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 100 mJ
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 100A
Drain-source On Resistance-Max 0.022Ohm
Drain Current-Max (Abs) (ID) 25A
JEDEC-95 Code TO-220AB
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Current - Continuous Drain (Id) @ 25°C 25A Tc
Input Capacitance (Ciss) (Max) @ Vds 1.1pF @ 15V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 22m Ω @ 25A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 50W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status COMMERCIAL
JESD-30 Code R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Finish NOT SPECIFIED
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Tube
Operating Temperature -65°C~175°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-220-3
Mounting Type Through Hole
Alternative Model
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