MTP23P06VG
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
P-CHANNEL POWER MOSFET
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Buying Options
Total Price: USD $9.34
Unit Price: USD $9.3423
≥1 USD $9.3423
≥10 USD $7.66555
≥100 USD $7.42615
≥500 USD $7.1858
≥1000 USD $6.9464
Inventory: 10903
Minimum: 1
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Technical Details
Technical
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 90W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 120m Ω @ 11.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1.62pF @ 25V
Current - Continuous Drain (Id) @ 25°C 23A Tc
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±15V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 23A
Drain-source On Resistance-Max 0.12Ohm
Pulsed Drain Current-Max (IDM) 81A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 794 mJ
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
Terminal Finish MATTE TIN
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e3
Packaging Tube
Operating Temperature -55°C~175°C TJ
Compliance
RoHS Status ROHS3 Compliant
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-220-3
Mounting Type Through Hole
Alternative Model
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