IRLM110ATF
RoHS 
RoHS compliant
RoHS compliantPackage TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
N-CHANNEL POWER MOSFET
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G4
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.2W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 440m Ω @ 750mA, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 235pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.5A Tc
Gate Charge (Qg) (Max) @ Vgs 8nC @ 5V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 1.5A
Drain-source On Resistance-Max 0.44Ohm
Pulsed Drain Current-Max (IDM) 12A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 60 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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