IRFU9220
RoHS
/
Package TO-251-3 Short Leads, IPak, TO-251AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
P-CHANNEL POWER MOSFET
PDF
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Buying Options
Total Price: USD $1.53
Unit Price: USD $1.53425
≥1 USD $1.53425
≥10 USD $1.25875
≥100 USD $1.2198
≥500 USD $1.18085
≥1000 USD $1.14095
Inventory: 5046
Minimum: 1
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Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN LEAD
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSIP-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 42W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5 Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.6A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 3.6A
DS Breakdown Voltage-Min 200V
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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