IRFP460C
RoHS 
RoHS compliant
RoHS compliantPackage TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
N-CHANNEL POWER MOSFET
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Buying Options
Total Price: USD $1.54
Unit Price: USD $1.5352
≥1 USD $1.5352
≥10 USD $1.2597
≥100 USD $1.2198
≥500 USD $1.18085
≥1000 USD $1.1419
Inventory: 1506
Minimum: 1
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Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT APPLICABLE
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 235W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 240m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Drain Current-Max (Abs) (ID) 20A
Drain-source On Resistance-Max 0.24Ohm
Pulsed Drain Current-Max (IDM) 80A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 1050 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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