IRFP140
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
N-CHANNEL POWER MOSFET
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Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Technical
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 77m Ω @ 19A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1.7pF @ 25V
Current - Continuous Drain (Id) @ 25°C 31A Tc
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drain Current-Max (Abs) (ID) 31A
Drain-source On Resistance-Max 0.077Ohm
Pulsed Drain Current-Max (IDM) 120A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 100 mJ
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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