IRFD9120
RoHS
/
Package 4-DIP (0.300, 7.62mm)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
SMALL SIGNAL P-CHANNEL MOSFET
PDF
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Buying Options
Total Price: USD $0.81
Unit Price: USD $0.8096
≥1 USD $0.8096
Inventory: 26746
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
DS Breakdown Voltage-Min 100V
Drain-source On Resistance-Max 0.6Ohm
Drain Current-Max (Abs) (ID) 1A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Current - Continuous Drain (Id) @ 25°C 1A Ta
Input Capacitance (Ciss) (Max) @ Vds 390pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 600m Ω @ 600mA, 10V
Transistor Application SWITCHING
FET Type P-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1.3W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PDIP-T4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
HTS Code 8541.29.00.95
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case 4-DIP (0.300, 7.62mm)
Mounting Type Through Hole
Alternative Model
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