IRFD213
RoHS
/
Package 4-DIP (0.300, 7.62mm)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
SMALL SIGNAL N-CHANNEL MOSFET
PDF
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Buying Options
Total Price: USD $0.56
Unit Price: USD $0.5632
≥1 USD $0.5632
Inventory: 5617
Minimum: 1
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Technical Details
Physical
Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN LEAD
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDIP-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2 Ω @ 270mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V
Current - Continuous Drain (Id) @ 25°C 450mA Ta
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Drain to Source Voltage (Vdss) 250V
Drain Current-Max (Abs) (ID) 0.45A
Drain-source On Resistance-Max 2.4Ohm
DS Breakdown Voltage-Min 150V
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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